2SB1056-R Bipolar Transistor

Characteristics of 2SB1056-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -140 V
  • Collector-Base Voltage, max: -140 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 40 to 80
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3PF

Pinout of 2SB1056-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1056-R transistor can have a current gain of 40 to 80. The gain of the 2SB1056 will be in the range from 40 to 200, for the 2SB1056-P it will be in the range from 100 to 200, for the 2SB1056-Q it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1056-R might only be marked "B1056-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1056-R is the 2SD1487-R.

Replacement and Equivalent for 2SB1056-R transistor

You can replace the 2SB1056-R with the 2SB1057 or 2SB1057-R.
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