2SA699A-R Bipolar Transistor

Characteristics of 2SA699A-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -40 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 100 to 220
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-202

Pinout of 2SA699A-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA699A-R transistor can have a current gain of 100 to 220. The gain of the 2SA699A will be in the range from 50 to 220, for the 2SA699A-P it will be in the range from 50 to 100, for the 2SA699A-Q it will be in the range from 80 to 160.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA699A-R might only be marked "A699A-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SA699A-R is the 2SC1226A-R.

SMD Version of 2SA699A-R transistor

The 2DA1213 (SOT-89), 2SA1213 (SOT-89), 2SB1123 (SOT-89), 2SB1123-R (SOT-89), 2SB1124 (SOT-89) and 2SB1124-R (SOT-89) is the SMD version of the 2SA699A-R transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA699A-R transistor

You can replace the 2SA699A-R with the 2SA636, 2SA636A or NTE187.
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