2SA642G Bipolar Transistor

Characteristics of 2SA642G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.3 A
  • Collector Dissipation: 0.4 W
  • DC Current Gain (hfe): 200 to 400
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA642G

The 2SA642G is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA642G transistor can have a current gain of 200 to 400. The gain of the 2SA642 will be in the range from 70 to 400, for the 2SA642O it will be in the range from 70 to 140, for the 2SA642Y it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA642G might only be marked "A642G".

Complementary NPN transistor

The complementary NPN transistor to the 2SA642G is the 2SD227G.

2SA642G Transistor in TO-92 Package

The KSA642G is the TO-92 version of the 2SA642G.

Replacement and Equivalent for 2SA642G transistor

You can replace the 2SA642G with the 2SB564A, 2SB564AGR, BCX79, KSA642, KSA642G, KSB564A, KSB564AG, MPS6535, MPS6651, MPS6651G, MPS6652, MPS6652G, MPS750, MPS750G, MPSW51, MPSW51A, MPSW51AG, MPSW51G, NTE193 or PN200.
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