2SA1962O Bipolar Transistor

Characteristics of 2SA1962O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -250 V
  • Collector-Base Voltage, max: -250 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -17 A
  • Collector Dissipation: 130 W
  • DC Current Gain (hfe): 80 to 160
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -50 to +150 °C
  • Package: TO-3P

Pinout of 2SA1962O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1962O transistor can have a current gain of 80 to 160. The gain of the 2SA1962 will be in the range from 55 to 160, for the 2SA1962R it will be in the range from 55 to 110.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1962O might only be marked "A1962O".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1962O is the 2SC5242O.

Replacement and Equivalent for 2SA1962O transistor

You can replace the 2SA1962O with the FJA4213, FJA4213O, FJL4215 or FJL4215O.
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