2SA1767Q Bipolar Transistor

Characteristics of 2SA1767Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -300 V
  • Collector-Base Voltage, max: -300 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.07 A
  • Collector Dissipation: 0.75 W
  • DC Current Gain (hfe): 60 to 150
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA1767Q

The 2SA1767Q is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1767Q transistor can have a current gain of 60 to 150. The gain of the 2SA1767 will be in the range from 60 to 220, for the 2SA1767R it will be in the range from 100 to 220.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1767Q might only be marked "A1767Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1767Q is the 2SC1473AQ.

SMD Version of 2SA1767Q transistor

The BF621 (SOT-89) and BF821 (SOT-23) is the SMD version of the 2SA1767Q transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA1767Q transistor

You can replace the 2SA1767Q with the 2SA1091, 2SA1091-O, 2SA1371, 2SA1624, 2SA1625, KSA1625, KTA1277 or KTA1279.
If you find an error please send an email to mail@el-component.com