2SA1286-G Bipolar Transistor

Characteristics of 2SA1286-G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -20 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 0.9 W
  • DC Current Gain (hfe): 400 to 800
  • Transition Frequency, min: 90 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92MOD

Pinout of 2SA1286-G

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1286-G transistor can have a current gain of 400 to 800. The gain of the 2SA1286 will be in the range from 400 to 800.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1286-G might only be marked "A1286-G".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1286-G is the 2SC3246-G.

SMD Version of 2SA1286-G transistor

The 2SA1369 (SOT-89) and 2SA1369-G (SOT-89) is the SMD version of the 2SA1286-G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA1286-G transistor

You can replace the 2SA1286-G with the 2SA1282A.
If you find an error please send an email to mail@el-component.com