2SA1127-S Bipolar Transistor

Characteristics of 2SA1127-S Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -55 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.4 W
  • DC Current Gain (hfe): 260 to 520
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA1127-S

The 2SA1127-S is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1127-S transistor can have a current gain of 260 to 520. The gain of the 2SA1127 will be in the range from 180 to 700, for the 2SA1127-R it will be in the range from 180 to 360, for the 2SA1127-T it will be in the range from 360 to 700.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1127-S might only be marked "A1127-S".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1127-S is the 2SC2634-S.

Replacement and Equivalent for 2SA1127-S transistor

You can replace the 2SA1127-S with the 2SA1025, 2SA1081, 2SA1083, 2SA1084, 2SA1316, 2SA991, 2SB560, 2SB726 or 2SB726-S.
If you find an error please send an email to mail@el-component.com