2SA1123-T Bipolar Transistor

Characteristics of 2SA1123-T Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -150 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.05 A
  • Collector Dissipation: 0.75 W
  • DC Current Gain (hfe): 260 to 450
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2SA1123-T

The 2SA1123-T is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1123-T transistor can have a current gain of 260 to 450. The gain of the 2SA1123 will be in the range from 130 to 450, for the 2SA1123-R it will be in the range from 130 to 220, for the 2SA1123-S it will be in the range from 185 to 330.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1123-T might only be marked "A1123-T".

Replacement and Equivalent for 2SA1123-T transistor

You can replace the 2SA1123-T with the 2SA1124, 2SA1124-T, 2SA1285A, 2SA1285A-F, 2SA1376, BF421, BF423 or KTA1279.
If you find an error please send an email to mail@el-component.com