2SA1095-R Bipolar Transistor
Characteristics of 2SA1095-R Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -160 V
- Collector-Base Voltage, max: -160 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -15 A
- Collector Dissipation: 150 W
- DC Current Gain (hfe): 55 to 110
- Transition Frequency, min: 60 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: MT-200
Pinout of 2SA1095-R
Classification of hFE
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SA1095-R transistor
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