2SA1007 Bipolar Transistor

Characteristics of 2SA1007 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -130 V
  • Collector-Base Voltage, max: -150 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 40 to 320
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3

Pinout of 2SA1007

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1007 transistor can have a current gain of 40 to 320. The gain of the 2SA1007-p will be in the range from 160 to 320, for the 2SA1007-Q it will be in the range from 100 to 200, for the 2SA1007-R it will be in the range from 60 to 120, for the 2SA1007-S it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1007 might only be marked "A1007".

Replacement and Equivalent for 2SA1007 transistor

You can replace the 2SA1007 with the 2SA1007A, 2SA747A, 2SA908, 2SA909, 2SB697 or 2SB697K.
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