2N6556 Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -100 V
• Collector-Base Voltage, max: -100 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -1 A
• Collector Dissipation: 10 W
• DC Current Gain (h_fe): 80 to 300
• Transition Frequency, min: 375 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-202

Here is an image showing the pin diagram of this transistor.The complementary NPN transistor to the 2N6556 is the 2N6553.The 2SA1368 (SOT-89) is the SMD version of the 2N6556 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.