2N6553 Bipolar Transistor

Characteristics of 2N6553 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 80 to 300
  • Transition Frequency, min: 375 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-202

Pinout of 2N6553

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the 2N6553 is the 2N6556.

SMD Version of 2N6553 transistor

The 2SC3438 (SOT-89) is the SMD version of the 2N6553 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
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