2N6551 Bipolar Transistor
Characteristics of 2N6551 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 60 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 1 A
- Collector Dissipation: 10 W
- DC Current Gain (hfe): 80 to 300
- Transition Frequency, min: 375 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-202
Pinout of 2N6551
Complementary PNP transistor
SMD Version of 2N6551 transistor
Replacement and Equivalent for 2N6551 transistor
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