2N6551 Bipolar Transistor

Characteristics of 2N6551 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 80 to 300
  • Transition Frequency, min: 375 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-202

Pinout of 2N6551

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the 2N6551 is the 2N6554.

SMD Version of 2N6551 transistor

The 2SC3444 (SOT-89), FMMTA05 (SOT-23) and KST05 (SOT-23) is the SMD version of the 2N6551 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2N6551 transistor

You can replace the 2N6551 with the 2N6552 or 2N6553.
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