2N6520 Bipolar Transistor

Characteristics of 2N6520 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -350 V
  • Collector-Base Voltage, max: -350 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 20 to 200
  • Transition Frequency, min: 40 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2N6520

The 2N6520 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the 2N6520 is the 2N6517.
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