2N6517 Bipolar Transistor
Characteristics of 2N6517 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 350 V
- Collector-Base Voltage, max: 350 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 0.5 A
- Collector Dissipation: 0.625 W
- DC Current Gain (hfe): 20 to 200
- Transition Frequency, min: 40 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Pinout of 2N6517
Here is an image showing the pin diagram of this transistor.
Complementary PNP transistor
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