2N6517 Bipolar Transistor

Characteristics of 2N6517 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 350 V
  • Collector-Base Voltage, max: 350 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 20 to 200
  • Transition Frequency, min: 40 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2N6517

The 2N6517 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads. The 2N6517C transistor (with suffix "C") is the center collector version of the 2N6517.
Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the 2N6517 is the 2N6520.
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