2N6421 Bipolar Transistor
Characteristics of 2N6421 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -250 V
- Collector-Base Voltage, max: -375 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -2 A
- Collector Dissipation: 35 W
- DC Current Gain (hfe): 25 to 100
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-66
Pinout of 2N6421
Complementary NPN transistor
Replacement and Equivalent for 2N6421 transistor
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