2N6213 Bipolar Transistor

Characteristics of 2N6213 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -350 V
  • Collector-Base Voltage, max: -400 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 35 W
  • DC Current Gain (hfe): 10 to 100
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-66

Pinout of 2N6213

Here is an image showing the pin diagram of this transistor.
If you find an error please send an email to mail@el-component.com