2N6213 Bipolar Transistor
Characteristics of 2N6213 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -350 V
- Collector-Base Voltage, max: -400 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -2 A
- Collector Dissipation: 35 W
- DC Current Gain (hfe): 10 to 100
- Transition Frequency, min: 10 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-66
Pinout of 2N6213
If you find an error please send an email to mail@el-component.com