2N6329 Bipolar Transistor

Characteristics of 2N6329 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 30 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 6 to 30
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N6329

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N6329 transistor

You can replace the 2N6329 with the 2N6326, 2N6327, 2N6328, 2N6330 or 2N6331.
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