2N6330 Bipolar Transistor

Characteristics of 2N6330 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 30 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 6 to 30
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N6330

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N6330 transistor

You can replace the 2N6330 with the 2N6327, 2N6328 or 2N6331.
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