2N6312 Bipolar Transistor

Characteristics of 2N6312 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -40 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 75 W
  • DC Current Gain (hfe): 25 to 100
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-66

Pinout of 2N6312

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the 2N6312 is the 2N4231A.

Replacement and Equivalent for 2N6312 transistor

You can replace the 2N6312 with the 2N6313, 2N6314, 2N6372, 2N6373 or 2N6374.
If you find an error please send an email to mail@el-component.com