2N6313 Bipolar Transistor

Characteristics of 2N6313 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 75 W
  • DC Current Gain (hfe): 25 to 100
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-66

Pinout of 2N6313

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the 2N6313 is the 2N4232A.

Replacement and Equivalent for 2N6313 transistor

You can replace the 2N6313 with the 2N6314, 2N6372 or 2N6373.
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