2N5990 Bipolar Transistor
Characteristics of 2N5990 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 80 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 12 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 20 to 120
- Transition Frequency, min: 2 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-127
Pinout of 2N5990
Complementary PNP transistor
Replacement and Equivalent for 2N5990 transistor
If you find an error please send an email to mail@el-component.com