2N5991 Bipolar Transistor
Characteristics of 2N5991 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 12 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 20 to 120
- Transition Frequency, min: 2 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-127
Pinout of 2N5991
Complementary PNP transistor
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