2N5869 Bipolar Transistor

Characteristics of 2N5869 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 87.5 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N5869

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the 2N5869 is the 2N5867.

Replacement and Equivalent for 2N5869 transistor

You can replace the 2N5869 with the 2N5039, 2N5671, 2N5672, 2N5870, 2N5873, 2N5874, 2N5877, 2N5878, 2N5881, 2N5882, 2N5885, 2N5885G, 2N5886, 2N5886G, 2N6315, 2N6316, 2N6471, 2N6472, 2SC1618, 2SC1619, KD502, KD503, MJ14000, MJ14000G, MJ14002, MJ14002G, MJ2840 or MJ2841.
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