2N5870 Bipolar Transistor

Characteristics of 2N5870 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 80 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 87.5 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N5870

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the 2N5870 is the 2N5868.

Replacement and Equivalent for 2N5870 transistor

You can replace the 2N5870 with the 2N5038, 2N5038G, 2N5039, 2N5671, 2N5672, 2N5874, 2N5878, 2N5882, 2N5886, 2N5886G, 2N6316, 2N6472, 2SC1619, KD503, MJ14002, MJ14002G or MJ2841.
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