2N5831 Bipolar Transistor

Characteristics of 2N5831 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 140 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.6 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 80 to 250
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92

Pinout of 2N5831

The 2N5831 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

SMD Version of 2N5831 transistor

The 2N5551S (SOT-23), DXT5551 (SOT-89), DZT5551 (SOT-223), KST5550 (SOT-23), KST5551 (SOT-23), MMBT5550 (SOT-23), MMBT5551 (SOT-23), PMBT5550 (SOT-23) and PMBT5551 (SOT-23) is the SMD version of the 2N5831 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2N5831 transistor

You can replace the 2N5831 with the 2N5550, 2N5551, 2N5551G, 2N5833, 2SC1009, KSC1009 or NTE194.
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