PMBT5550 Bipolar Transistor

Characteristics of PMBT5550 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 140 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.3 A
  • Collector Dissipation: 0.25 W
  • DC Current Gain (hfe): 60 to 250
  • Transition Frequency, min: 100 MHz
  • Noise Figure, max: 10 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23
  • Electrically Similar to the Popular 2N5550 transistor

Pinout of PMBT5550

Here is an image showing the pin diagram of this transistor.

Marking

The PMBT5550 transistor is marked as "p1F".

PMBT5550 Transistor in TO-92 Package

The 2N5550 is the TO-92 version of the PMBT5550.

Replacement and Equivalent for PMBT5550 transistor

You can replace the PMBT5550 with the FMMT625, KST43, KST5550 or MMBT5550.
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