PMBT5550 Bipolar Transistor
Characteristics of PMBT5550 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 140 V
- Collector-Base Voltage, max: 160 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 0.3 A
- Collector Dissipation: 0.25 W
- DC Current Gain (hfe): 60 to 250
- Transition Frequency, min: 100 MHz
- Noise Figure, max: 10 dB
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: SOT-23
- Electrically Similar to the Popular 2N5550 transistor
Pinout of PMBT5550
Marking
PMBT5550 Transistor in TO-92 Package
Replacement and Equivalent for PMBT5550 transistor
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