2N5813 Bipolar Transistor

Characteristics of 2N5813 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -35 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.75 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 150 to 500
  • Transition Frequency, min: 135 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Pinout of 2N5813

The 2N5813 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the collector, base, and emitter leads.
Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the 2N5813 is the 2N5812.

Replacement and Equivalent for 2N5813 transistor

You can replace the 2N5813 with the BC327 or BC328.
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