2N5812 Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 25 V
• Collector-Base Voltage, max: 35 V
• Emitter-Base Voltage, max: 5 V
• Collector Current − Continuous, max: 0.75 A
• Collector Dissipation: 0.625 W
• DC Current Gain (h_fe): 150 to 500
• Transition Frequency, min: 135 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-92

The 2N5812 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the collector, base, and emitter leads.
Here is an image showing the pin diagram of this transistor.The complementary PNP transistor to the 2N5812 is the 2N5813.You can replace the 2N5812 with the BC337 or BC338.