2N5681 Bipolar Transistor

Characteristics of 2N5681 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 4 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 40 to 150
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-39

Pinout of 2N5681

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the 2N5681 is the 2N5679.

Replacement and Equivalent for 2N5681 transistor

You can replace the 2N5681 with the 2N5320, 2N5682 or 2SC510.
If you find an error please send an email to mail@el-component.com