2N5682 Bipolar Transistor

Characteristics of 2N5682 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 4 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 40 to 150
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-39

Pinout of 2N5682

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the 2N5682 is the 2N5680.

SMD Version of 2N5682 transistor

The FMMT625 (SOT-23) is the SMD version of the 2N5682 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
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