2N5682 Bipolar Transistor
Characteristics of 2N5682 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 120 V
- Collector-Base Voltage, max: 120 V
- Emitter-Base Voltage, max: 4 V
- Collector Current − Continuous, max: 1 A
- Collector Dissipation: 10 W
- DC Current Gain (hfe): 40 to 150
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-39
Pinout of 2N5682
Complementary PNP transistor
SMD Version of 2N5682 transistor
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