2N5632 Bipolar Transistor

Characteristics of 2N5632 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 25 to 100
  • Transition Frequency, min: 1 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N5632

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the 2N5632 is the 2N6229.

Replacement and Equivalent for 2N5632 transistor

You can replace the 2N5632 with the 2N5038, 2N5038G, 2N5039, 2N5629, 2N5672, BD317, BUY69C, BUY70C, MJ15001, MJ15001G, MJ15003 or MJ15003G.
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