2N5195 Bipolar Transistor

Characteristics of 2N5195 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 20 to 80
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of 2N5195

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the 2N5195 is the 2N5192.

Replacement and Equivalent for 2N5195 transistor

You can replace the 2N5195 with the 2N5195G or NTE185.

Lead-free Version

The 2N5195G transistor is the lead-free version of the 2N5195.
If you find an error please send an email to mail@el-component.com