2N5192 Bipolar Transistor
Characteristics of 2N5192 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 80 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 4 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 20 to 80
- Transition Frequency, min: 2 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-126
Pinout of 2N5192
Complementary PNP transistor
Replacement and Equivalent for 2N5192 transistor
Lead-free Version
If you find an error please send an email to mail@el-component.com