IRFP250N MOSFET
Specifications of IRFP250N MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 200 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 75 mΩ
- Continuous Drain Current: 30 A
- Total Gate Charge: 82 nC
- Power Dissipation: 214 W
- Package: TO-247AC