IRF1324S-7P MOSFET
Specifications of IRF1324S-7P MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 24 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 1 mΩ
- Continuous Drain Current: 429 A
- Total Gate Charge: 180 nC
- Power Dissipation: 300 W
- Package: D2-PAK 7-LEAD
Pinout of IRF1324S-7P
