IRF1010EZS MOSFET
Specifications of IRF1010EZS MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 60 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 8.5 mΩ
- Continuous Drain Current: 84 A
- Total Gate Charge: 58 nC
- Power Dissipation: 140 W
- Package: D2-PAK
Pinout of IRF1010EZS
Replacement and Equivalent of IRF1010EZS Transistor
You can replace the IRF1010EZS with the
IRF1407S,
IRF2907ZS,
IRF3808S,
IRFS3006,
IRFS3107,
IRFS3206,
IRFS3207,
IRFS3207Z,
IRFS3306,
IRFS3307,
IRFS3307Z,
IRFS4010,
IRFS4310,
IRFS4310Z
