IRF1010EZL MOSFET

Specifications of IRF1010EZL MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 60 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 8.5 mΩ
  • Continuous Drain Current: 84 A
  • Total Gate Charge: 58 nC
  • Power Dissipation: 140 W
  • Package: TO-262

Pinout of IRF1010EZL

IRF1010EZL pinout

Replacement and Equivalent of IRF1010EZL Transistor

You can replace the IRF1010EZL with the IRF2907ZL, IRFSL3006, IRFSL3107, IRFSL3206, IRFSL3306, IRFSL4010, IRFSL4310, IRFSL4310Z