TIP51 Bipolar Transistor
Characteristics of TIP51 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 250 V
- Collector-Base Voltage, max: 350 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 3 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 30 to 150
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-247
Pinout of TIP51
Replacement and Equivalent for TIP51 transistor
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