STN851 Bipolar Transistor
Characteristics of STN851 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 60 V
- Collector-Base Voltage, max: 150 V
- Emitter-Base Voltage, max: 7 V
- Collector Current − Continuous, max: 5 A
- Collector Dissipation: 1.6 W
- DC Current Gain (hfe): 150 to 350
- Transition Frequency, min: 130 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: SOT-223
Pinout of STN851
Marking
Complementary PNP transistor
Replacement and Equivalent for STN851 transistor
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