S8550 Bipolar Transistor

Characteristics of S8550 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -25 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 85 to 300
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Pinout of S8550

The S8550 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Classification of hFE

The S8550 transistor can have a current gain of 85 to 300. The gain of the S8550B will be in the range from 85 to 160, for the S8550C it will be in the range from 120 to 200, for the S8550D it will be in the range from 160 to 300.

Complementary NPN transistor

The complementary NPN transistor to the S8550 is the S8050.

Replacement and Equivalent for S8550 transistor

You can replace the S8550 with the 2SB564A, KSB564A, M8550, MPS3702, MPS6535, MPS6651, MPS6651G, MPS6652, MPS6652G, MPS750, MPS750G, MPS8550, MPSW51, MPSW51A, MPSW51AG, MPSW51G, S9012 or SS8550.
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