PBHV8115T Bipolar Transistor

Characteristics of PBHV8115T Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 150 V
  • Collector-Base Voltage, max: 400 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 0.3 W
  • DC Current Gain (hfe): 100
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23

Pinout of PBHV8115T

Here is an image showing the pin diagram of this transistor.

Marking

The PBHV8115T transistor is marked as "W6".

Complementary PNP transistor

The complementary PNP transistor to the PBHV8115T is the PBHV9115T.
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