NTE159 Bipolar Transistor
Characteristics of NTE159 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -80 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.8 A
- Collector Dissipation: 0.625 W
- DC Current Gain (hfe): 50 to 250
- Transition Frequency, min: 250 MHz
- Noise Figure, max: 3 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Pinout of NTE159
Here is an image showing the pin diagram of this transistor.
Complementary NPN transistor
SMD Version of NTE159 transistor
Replacement and Equivalent for NTE159 transistor
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