MPS6717G Bipolar Transistor
Characteristics of MPS6717G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 80 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.5 A
- Collector Dissipation: 1 W
- DC Current Gain (hfe): 50 to 250
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
- Electrically Similar to the Popular 2N6717 transistor
- The MPS6717G is the lead-free version of the MPS6717 transistor
Pinout of MPS6717G
Here is an image showing the pin diagram of this transistor.
SMD Version of MPS6717G transistor
Replacement and Equivalent for MPS6717G transistor
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