MMBT5550 Bipolar Transistor

Characteristics of MMBT5550 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 140 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.6 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 60 to 250
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23

Pinout of MMBT5550

Here is an image showing the pin diagram of this transistor.

Marking

The MMBT5550 transistor is marked as "1F".

Replacement and Equivalent for MMBT5550 transistor

You can replace the MMBT5550 with the FMMT625 or KST5550.
If you find an error please send an email to mail@el-component.com