MMBT5210 Bipolar Transistor
Characteristics of MMBT5210 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 50 V
- Collector-Base Voltage, max: 50 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.1 A
- Collector Dissipation: 0.35 W
- DC Current Gain (hfe): 200 to 600
- Transition Frequency, min: 30 MHz
- Noise Figure, max: 2 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-23
- These Devices are Pb-Free and are RoHS Compliant
Pinout of MMBT5210
Marking
Replacement and Equivalent for MMBT5210 transistor
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