MMBT3906T Bipolar Transistor
Characteristics of MMBT3906T Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -40 V
- Collector-Base Voltage, max: -40 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.2 A
- Collector Dissipation: 0.25 W
- DC Current Gain (hfe): 100 to 300
- Transition Frequency, min: 250 MHz
- Noise Figure, max: 4 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-523F
Pinout of MMBT3906T
Complementary NPN transistor
If you find an error please send an email to mail@el-component.com