MMBT3904TT1 Bipolar Transistor
Characteristics of MMBT3904TT1 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 40 V
- Collector-Base Voltage, max: 60 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 0.2 A
- Collector Dissipation: 0.15 W
- DC Current Gain (hfe): 100 to 300
- Transition Frequency, min: 300 MHz
- Noise Figure, max: 5 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-416
Pinout of MMBT3904TT1
Marking
Replacement and Equivalent for MMBT3904TT1 transistor
Lead-free Version
If you find an error please send an email to mail@el-component.com