MMBT200 Bipolar Transistor
Characteristics of MMBT200 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -45 V
- Collector-Base Voltage, max: -75 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -0.5 A
- Collector Dissipation: 0.35 W
- DC Current Gain (hfe): 100 to 450
- Transition Frequency, min: 250 MHz
- Noise Figure, max: 5 dB
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: SOT-23
- Electrically Similar to the Popular PN200 transistor
Pinout of MMBT200
Marking
Complementary NPN transistor
MMBT200 Transistor in TO-92 Package
Replacement and Equivalent for MMBT200 transistor
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