MJH11017G Bipolar Transistor
Characteristics of MJH11017G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -150 V
- Collector-Base Voltage, max: -150 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -15 A
- Collector Dissipation: 150 W
- DC Current Gain (hfe): 400 to 15000
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-247
- The MJH11017G is the lead-free version of the MJH11017 transistor
Pinout of MJH11017G
Replacement and Equivalent for MJH11017G transistor
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